Active and preferred
RoHS Compliant

AIKQB200N75CP2

750 V, 200A EDT2 IGBT with anti-parallel diode in reflow-solderable package TO247PLUS 3-Pin
Data Sheet
package
Multiple OPNs available
ea.

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AIKQB200N75CP2
AIKQB200N75CP2
ea.
Data Sheet

Product details

  • Co-pack diode technology
    EMCON3
  • Eon
    15.3 mJ
  • IC (@ 25°) max
    200 A
  • IC (@ 100°) max
    200 A
  • ICpuls max
    600 A
  • IF max
    200 A
  • IFpuls max
    600 A
  • Irrm
    41 A
  • Launch year
    2024
  • Package
    TO-247PLUS-3
  • Ptot max
    938 W
  • QGate
    1270 nC
  • Qrr
    4.7 nC
  • Reflow Solderable
    Yes
  • Switching Frequency
    7kHz - 15kHz
  • td(off)
    266 ns
  • td(on)
    89 ns
  • Technology
    EDT2
  • tf
    46 ns
  • tr
    120 ns
  • Type
    IGBT + Diode
  • VCE(sat)
    1.4 V
  • VCE max
    750 V
  • VF
    1.8 V
Recommended
OPN
AIKQB200N75CP2ALSA1 AIKQB200N75CP2AKSA1
Product Status active and preferred not for new design
Infineon Package
PG-TO247-3
PG-TO247-3
Package Name N/A N/A
Packing Size 240 240
Packing Type TUBE TUBE
Moisture Level 2 1
Moisture Packing DRY NON DRY
Lead-free No No
Halogen Free Yes Yes
RoHS Compliant Yes Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock

Product Status not for new design
Infineon Package
PG-TO247-3
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The AIKQB200N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system flexibility and power scalability. Upgrading existing designs with AIKQ200N75CP2 by using reflow soldering assembly enhances system performance with up to 40% better thermal conductivity.

Features

  • Best-in-class 750 V TO247PLUS
  • Suitable for 470 V VDC systems
  • Very low VCEsat
  • Short circuit robust tsc = 3 µs
  • Qualified Reflow device at 260°C
  • Self limiting short-circuit current
  • Very tight parameter distribution
  • Low gate charge QG
  • Resistive weldable pins
  • High creepage distance
  • Product Validation acc. to AEC-Q101

Benefits

  • Benchmark quality & switching behavior
  • Ideal for automotive requirements
  • Excellent parallel operation
  • High reliability and operating lifetime
  • Low switching losses and cooling effort
  • Various power classes - same package
  • Power scalability and cost optimization
  • High power output by reflow-soldering
  • Low costs per Ampere on system level
  • Low EMI signature
  • Simple gate drive design
  • Drop-in replacement

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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