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Next step towards higher power density with new IGBT and diode generation and influence on inverter design

Power density has become an important performance indicator for inverters. From this trend, two requirements arise for power modules containing IGBTs and diodes: First, the power modules must have a sufficient long lifetime even under higher thermal stress. One solution to fulfill this requirement is the implementation of the .XT technology. Second, the IGBTs and diodes have to provide better performance in terms of static and dynamic losses. This paper presents for the first time the common figures of merit of the new 1200 V IGBT and diode generation of Infineon Technologies. Looking at the whole system, the other inverter components have to be suitable to cope with the demands of an increased power density as well. In the second part of this study, measurements with different inverter designs are performed to evaluate their thermal management. Based on these results design rules for high power density inverters can be extracted

• 1.09 MB
• Feb 11, 2014