Modeling and simulation of GaN power systems

Webinar date: 27.05.2026 | 9 AM CEST/ 3 PM SGT | 5 PM CEST/ 8 AM PDT

Join our webinar to gain a detailed and practical overview of modeling and simulation techniques for GaN power systems and understand the importance of simulation models in the hardware development process.

Attending the webinar, you will gain a structured understanding of the comprehensive modeling hierarchy (L0–L3), from simple behavioral representations to advanced device-level models, and how each level contributes to accurate and efficient system design.

We will explain the structural differences between 3-pin and 4-pin high-voltage CoolGaN™ package options, and how these differences impact switching performance, layout considerations, and overall system optimization. Attendees will be introduced to Infineon’s CoolGaN™ SPICE models, including guidance on proper implementation and best practices for achieving realistic results.

You will learn about: 

  • Comprehensive modeling hierarchy and how each level supports accurate GaN system design
  • Importance of high-fidelity SPICE models for faster development
  • High-voltage CoolGaN™ package structures
  • Simulation result validation against real-world test benches
  • Identification of common convergence errors in simulations

Speaker

Franz Stueckler
Franz Stueckler
Franz Stueckler
Franz Stueckler

Product Definition Engineer

Franz holds a diploma in Electrical Engineering and a Master's degree in General Management. Currently working as a Product Definition Engineer at Infineon, he drives the product development strategy for high-voltage GaN devices.

With his 29 years of experience in power semiconductors, including diodes, IGBTs, MOSFETs, CoolMOS™, and CoolGaN™ devices, Franz possesses a deep understanding of device structure, interfaces (front and back metal), and device parameters, as well as their significance in various applications

Shorabh Singh
Shorabh Singh
Shorabh Singh
Shorabh Singh

Customer Application Engineer

Shorabh holds a bachelor’s degree in Electrical and Electronics Engineering and a master’s degree in Power Electronic Devices. In 2023 he joined Infineon as a Customer Application Engineer for the GaN portfolio, which includes transistors, bidirectional switches, and integrated GaN devices.

Modeling and simulation of GaN power systems
May 27, 2026
09:00 ( CET )

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