on request
RoHS Compliant

EVAL BGA7M1N6

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EVAL BGA7M1N6
EVAL BGA7M1N6

Product details

OPN
EVALBGA7M1N6TOBO1
Product Status on request
Infineon Package N/A
Package Name N/A
Packing Size 1
Packing Type CONTAINER
Moisture Level N/A
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:

Product Status on request
Infineon Package N/A
Package Name -
Packing Size 1
Packing Type CONTAINER
Moisture Level -
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BGA7M1N6 is a front-end low noise amplifier (LNA) for LTE applications in the range from 1805 MHz to 2200 MHz. The LNA provides 12.6 dB gain and 0.9 dB noise figure at 1.8V, 4.4 mA in the application.The BGA7M1N6 is based upon Infineon Technologies Silicon Germanium technology. Please specify your frequency requirement when you order the board.

Applications

Documents

Design resources