NPN Silicon RF Transistor
Summary of Features:
- General purpose low noise amplifier for low voltage, low current applications
- High ESD robustness, typical 1500V (HBM)
- Low minimum noise figure 1.1 dB at 1.8 GHz
- High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz
- Easy to use standard package with visible leads
- Pb-free (RoHS compliant) package
- Qualification report according to AEC-Q101 available
- Wireless Communications
- For amplifier and oscillator applications in RF Front-end
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