F4-23MR12W1M1_B11

Overview

Fourpack 1200 V CoolSiC™ MOSFET Module

EasyPACK™ 1B 1200 V, 23 mΩ fourpack module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology. 

Summary of Features

  • High current density
  • Best in class switching and conduction losses
  • Low inductive design
  • Integrated NTC temperature sensor
  • PressFIT contact technology
  • RoHS-compliant modules

Benefits

  • Highest efficiency for reduced cooling effort
  • Higher frequency operation
  • Increased power density
  • Optimized customer’s development cycle time and cost

Webinar about driving the electrification of commercial vehicles

 

Join our webinar and learn about trends and semiconductor system solutions in the electrification of commercial vehicles.

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The changing face of CAV – how electrification is changing the commercial vehicles business

 

This whitepaper reviews the e-CAV market‘s applications and takes a look at the solutions Infineon has on offer meeting the extreme demands placed on the electronic systems.

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Diagrams
Simulation
Training

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

29:16

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Support