950 V CoolMOS™ PFD7
The next level for ultrahigh power density designs for energy-efficient high power lighting, consumer and industrial SMPS applications
The 950 V CoolMOS™ PFD7 high-voltage MOSFET series sets a new benchmark in 950 V superjunction (SJ) technologies, shaped by Infineon’s experience of more than 20 years in pioneering in superjunction technology innovation. The series combines best-in-class performance with state-of-the-art ease of use and features an integrated fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer.
This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light and full load efficiency in the applications.
- Integrated ultra-fast body diode with BiC Qrr (reverse recovery charge)
- Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss
- Best-in-class RDS(on) in various packages like 450 mΩ in DPAK or 60 mΩ in TO-247
- Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V
- ESD protection up to class 2 (HBM)
- Best-in-class quality and reliability
- Best-in-class hard commutation ruggedness enabling usage across topologies
- Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3
- Enabling higher power density designs, BOM savings and lower assembly cost
- Easy to drive and to design-in
- Improved production yield by reducing ESD related failures
- Less production issues and reduced field returns
