950 V CoolMOS™ PFD7

The next level for ultrahigh power density designs for energy-efficient high-power lighting, consumer, and industrial SMPS applications

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Overview

PFD7 is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 combines a 60 percent Qg reduction over CoolMOS™ C3 (resulting in the reduction of driving losses, improved light, and full load efficiency) with a fast and robust body diode.

Key Features

  • Ultra-fast body diode, smallest Qrr
  • Best RDS(on) x Eoss; small Qg & Coss
  • V(GS)th of 3 V with tight ±0.5 V
  • ESD protection up to class 2 (HBM)
  • Best-in-class quality and reliability

Products

About

Compact design with powerful results: Ultrahigh power density designs

Wherever the RDS(on) ranges from 60 mΩ up to 450 mΩ, whether in hard- or soft-switching topology, the 950 V CoolMOS™ PFD7 provides switching benefits, makes the target application smaller and caters to thin designs by offering a high-voltage SMD packages. 

"950 V PFD7 technology for lighting, consumer, and industrial SMPS"

Best-in-class hard commutation ruggedness enabling usage across topologies. Up to 0.5 percent efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3. Enables higher power density designs, Bill of Material (BOM) savings, and lower assembly cost. Easy to drive and to design-in. Improved converter production yield by reducing ESD related failures - less production issues and reduced field returns.

Elevate performance with robust and reliable solutions

The PFD7 family was specifically designed with fast and robust body diode optimization in mind. The gate was also engineered to be rugged and complies with human-body model (HBM) and charge-device model (CDM) ESD classes C2 and C3, respectively. Contributing to robust operation is also a threshold voltage elevated to 3 V with small tolerances of ±0.5 V.

Compact design with powerful results: Ultrahigh power density designs

Wherever the RDS(on) ranges from 60 mΩ up to 450 mΩ, whether in hard- or soft-switching topology, the 950 V CoolMOS™ PFD7 provides switching benefits, makes the target application smaller and caters to thin designs by offering a high-voltage SMD packages. 

"950 V PFD7 technology for lighting, consumer, and industrial SMPS"

Best-in-class hard commutation ruggedness enabling usage across topologies. Up to 0.5 percent efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3. Enables higher power density designs, Bill of Material (BOM) savings, and lower assembly cost. Easy to drive and to design-in. Improved converter production yield by reducing ESD related failures - less production issues and reduced field returns.

Elevate performance with robust and reliable solutions

The PFD7 family was specifically designed with fast and robust body diode optimization in mind. The gate was also engineered to be rugged and complies with human-body model (HBM) and charge-device model (CDM) ESD classes C2 and C3, respectively. Contributing to robust operation is also a threshold voltage elevated to 3 V with small tolerances of ±0.5 V.

Documents

Documents

Design resources

Developer community

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