CoolSiC™ hybrid discrete

Overview

Cost-effective power switch for ultra-low switching losses

Use of a Schottky barrier diode as freewheeling diode co-packed with IGBT allows to extend capabilities of IGBT and enables significant reduction in Eon and overall switching losses. Freewheeling SiC Schottky barrier diodes significantly reduces switching losses at almost unchanged dv/dt and di/dt values.

Fast and easy, plug - and - play replacement of our 650 V TRENCHSTOP™5 IGBT designs allows instantly increase efficiency by 0.1% for each 10 kHz switching speed, meaning an application with switching speed of 23 kHz the efficiency increase will be ~  0.23%. Use of CoolSiC™ hybrid discretes in Kelvin Emitter 4-pin package may further reduce switching losses benefiting even higher efficiency gain.

Products
Highlights

The 650 V CoolSiC™ hybrid discretes combines key benefits of the best in class 650 V TRENCHSTOP™5 IGBT technology and unipolar structure of co-packed schottky barrier CoolSiC™ diode: 

Features Advantages Benefits
  • Best-in-class ultra fast oder fast switching TRENCHSTOP™ 5 IGBT technology
  • Co-packed with SiC Schottky barrier diode
  • 4pin Kelvin Emitter package
  • Best in class switching and conduction losses IGBT
  • Comparable to SiC MOSFET performance at competitive cost
  • Ultra short IGBT response time due to sense pin
  • Reduced voltage-overshoots (caused by dirr/dt of silicon diode), low EMI
  • High efficiency for reduced cooling effort or increased power density
  • Higher frequency operations
  • Easy replacement of design with TRENCHSTOP™ 5 IGBT – 0.1% efficiency gain for each 10kHz operational frequency
  • Bidirectional current flow

CoolSiC™ duo-pack hybrid discretes boost performance

650 V CoolSiC™ hybrid boost performance when applied in selected circuit positions
650 V CoolSiC™ hybrid boost performance when applied in selected circuit positions
650 V CoolSiC™ Hybrid IGBT boost performance when applied in selected circuit positions
650 V CoolSiC™ Hybrid IGBT boost performance when applied in selected circuit positions

TO-247 4pin package with Kelvin emitter

TO-247 4pin package with Kelvin emitter enables faster commutation, improving the switching behaviour of IGBT. Dynamic losses are reduced by 20% in comparison to standard TO-247 package, thus increasing the overall system efficiency and enabling the IGBTs to operate at lower temperature.

The faster the IGBT is able to switch, the bigger the benefit from TO-247 4pin becomes.

Training

CoolSiC™ hybrid discretes – application

CoolSiC™ hybrid discretes have drastically reduced switching losses due to the anti-parallel silicon carbide diode. This training will explain what does this means for the application.

CoolSiC™ hybrid discretes– background & introduction

This training will introduce you to CoolSiC™ hybrid discretes. They are a combination of two best-in-class semiconductor technologies with proven track record.

Support