High-voltage GaN bidirectional switches
CoolGaN™ BDS 650 V G5 - monolithic bidirectional switches based on GaN technology
This game-changing monolithic GaN switch can actively block voltage and current in both directions. Its innovative common drain design features a double gate structure, leveraging Infineon's proven rugged Gate Injection Transistor technology. This unique architecture enables the use of the same drift region to block voltages in both directions, resulting in a reduced die size compared to conventional back-to-back arrangements.
- 650 V bidirectional e-mode HEMT
- Bidirectional blocking capability
- Common-drain configuration
- 2 gates with independent control
The CoolGaN™ BDS 650 V G5 offers a significant leap forward in system efficiency and power density compared to traditional back-to-back unidirectional switch (UDS) solutions. By integrating two switches in a single device, this product enables designers to create more compact and efficient systems.
In solar microinverter, CoolGaN™ BDS 650 V G5 enables cost-effective single-stage isolated DC-link-less topologies, such as cycloconverter and matrix-type converter, replacing traditional designs based on back-to-back unidirectional switches. The resulting design, not requiring DC-link capacitor, offers higher efficiency and higher power density, buck-boost capability and bidirectional power flow.
Vienna-type converters, such as Vienna rectifiers, H4 PFC and single-phase Vienna, are widely used in the industry due to their simplicity and low component count. These topologies can benefit significantly from the adoption of CoolGaN™ HV BDS, by replacing existing back-to-back switches: designers can easily achieve higher switching frequencies and increase power density through the reduction of passive component sizes.
