Diode & Thyristor (Si/SiC)
Power Diodes and Thyristors in different designs and housings
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The goal of the highest reliability and efficiency in a core technology is always a moving target; therefore we understand that continuous improvement is essential. As a market leader for power diodes and thyristors, we offer the core technology for power generation, transmission, supply, and control – on every continent in the world.
Our strongest wish is to make our customers successful in their markets. That is why we innovate, develop and manufacture the most advanced solutions for their systems: high-performance discs with highest power density and additional functions, thyristor/diode modules offering an attractive price-performance ratio, high efficient silicon or CoolSiC™ silicon carbide diodes in discrete housings as well as bare dies for the highest flexibility.
High-power diodes and thyristors are used to boost efficiency significantly in many applications. They have set standards in a power range from 10 kW to over 10 GW. Discrete silicon or silicon carbide (SiC) Schottky diodes aim for applications like server farms, solar plants orenergy storage systems. Qualified for both industrial and automotive applications.
Thyristors have dominated this application for many decades. Nowadays thyristors as well as IGBTs are used in HVDC systems and FACTS to fulfill different needs.
The latest most price-performance generation of Infineon CoolSiC™ Schottky diode 650 V G6 offers the best efficiency per dollar.
Infineon provides a comprehensive portfolio of high-power products for Power Conversion, to help its customers to achieve their aims.
Energy means life: It heats houses, powers cars and lights megacities. The global appetite for energy is voracious, while resources are dwindling.
Rapid 1 and 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes.
Infineon`s Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI emissions to a minimum.
The Rapid 2 diode family is designed for applications switching between 40 kHz and 100 kHz by offering low reverse recovery charge (Q rr) and time (t rr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency.