EVAL-1ED3124MX12H
Active and preferred

EVAL-1ED3124MX12H

Evaluation board for 1ED3124MX12H - 2300 V, 14 A, 5.7 kV (rms) single-channel isolated gate driver
Application note

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

EVAL-1ED3124MX12H
EVAL-1ED3124MX12H
Application note


Product details

  • Board Type
    Evaluation Board
  • Family
    Gate Driver, IGBT Discrete, CoolSiC™ MOSFET
  • Go-wider-Board
    Yes
  • Input Type
    DC
  • Product Name
    EVAL-1ED3124MX12H
  • Qualification
    Industrial
  • Sub Application
    Telecommunication, Server
  • Supply Voltage range
    15.5 V to 16.5 V
  • Supply Voltage
    16 V
  • Target Application
    Commercial Air Conditioning, Power Supplies, Induction Heating, Industrial Drives, Solar Energy Systems, EV Charger
  • Topology
    Half Bridge

Recommended
OPN
EVAL1ED3124MX12HTOBO1
Product Status active and preferred
Infineon Package N/A
Package Name N/A
Packing Size N/A
Packing Type CONTAINER
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant No
Country of Assembly (CoA)
CN
Country of Diffusion (CoD)
CN
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package N/A
Package Name -
Packing Size 0
Packing Type CONTAINER
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
CN
Country of Diffusion (CoD)
CN
The EVAL-1ED3124MX12H utilizes two 1ED3124MU12H gate driver ICs for IGBTs and SiC MOSFETs, along with TRENCHSTOP™ IGBT IKQ75N120CH3. It features an additional gate driver IC for isolated over-current feedback and is ideal for double-pulse testing. The 1ED3124MU12H provides separate sink and source output, stable timing, active shutdown, and short-circuit clamping over a wide supply voltage range, unipolar or bipolar.

Features

  • Single channel isolated gate driver
  • For < 2300 V IGBT, SiC & Si MOSFET
  • 2300 V funct. offset volt. capable
  • Galvanically isolated
  • 14 A typ. sink & source peak outp.
  • 40 V absolute max. output voltage
  • 90 ns propagation delay
  • High CMTI >200 kV/μs
  • Separate source and sink outputs
  • Short-circuit clamping
  • DSO-8 300 mil wide-body package
  • 10.5 V/12.5 V UVLO protection

Benefits

  • Integrated filters
  • Increased reliability / robustness
  • For usage at high ambient temperature
  • For usage in fast switching applications
  • Minimum deadtime
  • Improving system efficiency
  • Decreasing harmonic distortion
  • Enable superior application safety
  • High isolation capability
  • For 1500 V DC solar inverter application

Bill of Material

Documents

Design resources

Partner solutions

Developer community