P2000DL45X168 Press Pack IGBT with internal freewheeling diode
Überblick
The Press Pack IGBT offers 2000 A with internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips.
Zusammenfassung der Merkmale
- Behavior in case of a failure
- Hermetically sealed housing
- Cooling of the device
- Stack Design
Vorteile
- Full long term short-on-fail
- Explosion proofed housing
- Highest power cycling capability
- Double side cooling
- Wide range of clamping force
Diagramme
Support
