Active and preferred
RoHS Compliant
Lead-free

BFP740ESD

ea.
in stock

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BFP740ESD
BFP740ESD
ea.

Product details

  • fT
    45 GHz
  • Gmax
    29 dB @900 MHz
  • IC max
    45 mA
  • NFmin
    0.55 dB @900 MHz
  • OIP3
    25 dBm
  • OP1dB
    10 dBm
  • Package
    SOT343
  • Ptot
    160 mW
  • VCEO max
    4.2 V
OPN
BFP740ESDH6327XTSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Features

  • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,  2 kV ESD robustness (HBM) due to integrated protection circuits
  • NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3V, 6 mA
  • High gain Gms = 25.5 dB at 2.4 GHz and Gma = 18.5 dB at 5.5 GHz, 3V, 25 mA
  • OIP3 = 24 dBm at 5.5 GHz, 3V, 25 mA
 

Applications

Documents

Design resources

Developer community

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