Active and preferred
RoHS Compliant
Lead-free

S70GL02GT12FHAV10

Data Sheet
package
software

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S70GL02GT12FHAV10
S70GL02GT12FHAV10
Data Sheet

Product details

  • Density
    2 GBit
  • Family
    GL-T
  • Initial Access Time
    120 ns
  • Interface Frequency (SDR/DDR) (MHz)
    NA
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Automotive
Recommended
OPN
S70GL02GT12FHAV10
Product Status active and preferred
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-13243)
Packing Size 1800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-13243)
Packing Size 1800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S70GL02GT12FHAV10 is a 2 Gb (256 MB) parallel NOR flash memory built on Infineon's 45 nm MIRRORBIT™ technology. It delivers 20 ns page access and 110 ns random access, with a 512-byte programming buffer for efficient writes. Operating from 2.7 V to 3.6 V and supporting I/O voltages from 1.65 V to VCC, it performs reliably across -40°C to +105°C. Uniform 128 KB sectors and AEC-Q100 automotive grade qualification make it ideal for embedded and automotive designs.

Features

  • 45 nm MIRRORBIT™ process technology
  • Parallel 3.0 V core with versatile I/O
  • ×8 and ×16 data bus support
  • 16-word/32-byte page read buffer
  • 512-byte programming buffer
  • Uniform 128-KB sectors, 2048 sectors
  • Suspend/Resume for program/erase
  • Advanced sector protection (ASP)
  • WP# input for last sector protection
  • 20 ns page access, 110 ns random access
  • 100,000 program-erase cycles per sector
  • 20-year data retention at 1K cycles

Benefits

  • High density for embedded applications
  • Fast programming boosts system speed
  • Flexible I/O for broad compatibility
  • Efficient block management with large sectors
  • Reliable data with advanced protection
  • Easy status monitoring simplifies design
  • Long endurance reduces maintenance
  • Low power modes extend battery life
  • Quick access improves performance
  • Secure last sector for critical code
  • Consistent performance over temperature
  • Long data retention ensures reliability

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }