IRHMS6S7260

Data Sheet

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IRHMS6S7260
IRHMS6S7260
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    35 A
  • ID (@25°C) max
    45 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • QG
    240 C
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    29 mΩ
  • SEE
    100 MeV∙cm2/mg
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHMS6S7260 R6 N-channel MOSFET is a radiation-hard device with 200V and 45A ratings. It features low RDS(on) and fast switching times that make it ideal for DC-DC converters and motor drives. This COTS device comes in a TO-254AA low ohmic package and electrical performance up to 100krad(Si) TID. It retains all the advantages of MOSFETs such as voltage control and temperature stability.

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