Active and preferred
RoHS Compliant

IQE018N06NM6SC

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance.
Data Sheet
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IQE018N06NM6SC
IQE018N06NM6SC
Data Sheet

Product details

  • ID (@25°C) max
    178 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    43 nC
  • RDS (on) (@10V) max
    1.8 mΩ
  • Special Features
    Dual-Side Cooling
  • VDS max
    60 V
  • VGS(th)
    2.7 V
Recommended
OPN
IQE018N06NM6SCATMA1
Product Status active and preferred
Infineon Package
PG-WHSON-8
Package Name N/A
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-WHSON-8
Package Name -
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Features

  • High performance silicon technology
  • Soft-switching optimized
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification
  • Source-down package variants
  • Standard-gate footprint, DSC

Benefits

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved performance efficiency
  • Superior power handling capability
  • Robust reliable performance
  • Enhanced thermal capabilities
  • Standard-Gate for easy layout fit-in

Documents

Documents

Design resources

Partner solutions

Developer community

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