Active and preferred
RoHS Compliant

IPB095N20NM6

OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package
Data Sheet
package
ea.
in stock

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IPB095N20NM6
IPB095N20NM6
ea.
Data Sheet

Product details

  • ID (@25°C) max
    116 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK (TO-263)
  • Polarity
    N
  • QG (typ @10V)
    53 nC
  • RDS (on) (@10V) max
    9.5 mΩ
  • VDS max
    200 V
  • VGS(th)
    3.7 V
Recommended
OPN
IPB095N20NM6ATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications.

Features

  • Industries lowest RDS(on) in 200 V
  • Industries lowest Qrr in 200 V
  • Compared to previous 200 V technology
  • Up to 42% lower RDS(on)
  • Up to 89% lower Qrr(typ)
  • 36% lower FOMg
  • More than 3 times softer diode
  • Improved capacitance linearity
  • Improved SOA
  • Tight Vgs(th) spread of +/- 750 mV
  • High avalanche ruggedness
  • Max Tj of 175°C and MSL1

Benefits

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Enhanced robustness
  • Improved system reliability

Documents

Documents

Design resources

Partner solutions

Developer community

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