CY62147G30-45ZSXAT
Active and preferred
RoHS Compliant
Lead-free

CY62147G30-45ZSXAT

Datasheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62147G30-45ZSXAT
CY62147G30-45ZSXAT
ea.
Datasheet


Product details

  • Density
    4 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.2 V to 3.6 V
  • Operating Voltage (VCCQ) max
    3.6 V
  • Organization (X x Y)
    256Kb x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(A)
  • Speed
    45 ns

Recommended
OPN
CY62147G30-45ZSXAT
Product Status active and preferred
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
PH
Country of Diffusion (CoD)
TW
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
PH
Country of Diffusion (CoD)
TW
ea.
in stock
CY62147G30-45ZSXAT is a 4-Mbit (256K × 16) CMOS asynchronous SRAM with embedded ECC for single-bit error correction. It supports byte writes via BLE/BHE and uses CE, OE, and WE control. The 3 V option operates from 2.2 V to 3.6 V over -40°C to 85°C, with 45 ns access time. Standby current is 3.5 µA typical and 8.7 µA max, with automatic/byte power-down. ICC is 20 mA max at f = 22.22 MHz. 44-pin TSOP II.

Features

  • 4-Mbit SRAM, 256K × 16
  • Embedded ECC 1-bit correction
  • 45 ns/55 ns read cycle time tRC
  • 16-bit I/O with BLE/BHE byte en
  • HI-Z outputs when deselected
  • Standby current max 8.7 µA
  • Data retention VDR = 1.0 V
  • ICCDR max 13 µA at VCC = 1.2 V
  • Operating temp –40°C to +85°C
  • ESD >2001 V (MIL-STD-883)
  • Latch-up current >140 mA

Benefits

  • ECC corrects single-bit faults
  • 45/55 ns enables fast access
  • Byte enables cut write activity
  • HI-Z outputs ease bus sharing
  • 8.7 µA max standby saves power
  • 1.0 V retention preserves data
  • 13 µA retention cuts backup load
  • –40°C to +85°C boosts reliability
  • >2001 V ESD improves handling
  • >140 mA latch-up adds robustness
  • Async SRAM avoids DRAM refresh

Applications

Documents

Design resources

Partner solutions

Developer community