IMBG120R350M1H
Overview
CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package
The CoolSiC™1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Summary of Features
- Very low switching losses
- Short-circuit withstand time, 3 µs
- Fully controllable dV/dt
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
- Package creepage and clearance distances, > 6.1 mm
- Sense pin for optimized switching performance
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system complexity and cost
- SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
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