OptiMOS™ 6 power MOSFET 200 V
Setting the new industry standard
Infineon’s new 200 V MOSFET family utilizes the latest OptiMOS™ 6 MOSFET trench technology, enabling high power density, efficiency and ruggedness.
Compared to the previous technology, OptiMOS™ 6 enables significant performance benefits:
- Low conduction losses
- Low switching losses
- Improved EMI
- Less paralelling required
- Better current sharing when paralelling
- RoHS compliant, lead free
The new OptiMOS™ 6 200 V MOSFETs represent the latest state of the art trench MOSFET technology. It addresses the need for high power density, high efficiency, and high reliability by offering:
- A 42% RDS(on) reduction at room temperature, and as much as 53% reduction at 175°C compared to the previous generation
- Improved switching performance due to reduced Qrr, and improved capacitance linearity
- In effect - both conduction and switching losses can be reduced without compromising EMI
- The technology features improved SOA to increase the MOSFET current handling in protection switch applications, while design optimizations and production precision make the reliable, high-performing technology the ideal choice for paralleling
The OptiMOS™ 6 200 V MOSFET trench technology was designed for optimal performance in motor drive applications such as e-Scooters, micro-EVs, E-forklifts.
The technology features a significantly reduced RDS(on) resulting in lower conduction losses. A narrow gate threshold voltage spread and reduced transconductance make the OptiMOS™ 6 200 V a superior device for paralleling. Together with the soft diode behavior and the low reverse recovery charge, in addition to a linearity improvement of output capacitance, the OptiMOS™ 6 200 V provides the lowest switching losses, enhancing the system efficiency across all operating conditions.
The improved switching behavior results in lower EMI and reduced switching losses. For any type of switching Application such as server,
telecom, ESS or solar this results in increased efficiency and power density.
Last but not least, the combination of a wide SOA and a low RDS(on) make this device ideal for static switching applications such as BMS.
