OptiMOS™ 6 200 V

The latest power MOSFET technology setting the new industry standard for applications in 200 V

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Overview

Infineon’s latest OptiMOS™ 6 MOSFET technology at 200 V utilizes a proprietary novel needle trench technology that enables higher power density, efficiency, and ruggedness. Compared to the latest OptiMOS™ 3 technology enables significant performance benefits.

Key Features

  • 42% lower RDS(on) vs previous gen.
  • 45% lower Qrr vs previous gen
  • 42% lower QOSS vs previous gen
  • Improved linearity of capacitances
  • Improved dynamic current sharing
  • Tight parameter spread
  • MSL 1 classified based on J-STD-020

Products

About

OptiMOS™ 6 200 V technology

The new OptiMOS™ 6 200 V represents the Infineon state of the art needle trench MOSFET technology. It addresses the need for high power density, high efficiency, and high reliability by offering: 

  • A 42% RDS(on) reduction at room temperature, and as much as 53% reduction at 175°C compared to the previous generation
  • Improved switching performance due to reduced Qrr, Qoss, and improved capacitance linearity.
  • In effect - both conduction and switching losses can be reduced without compromising EMI 
  • The technology features improved SOA to increase the MOSFET current handling in protection switch applications, while design optimizations and production precision make the reliable, high-performing technology the ideal choice for paralleling.
Available in a wide range of packages to meet your design requirements

Infineon’s OptiMOS™ 6 200 V power MOSFETs are available in a wide range of packages to meet your design requirements:

  • TOLL
  • TO-220
  • D2PAK-3pin
  • D2PAK-7pin
  • SuperSO8
  • PQFN 3.3x3.3
OptiMOS™ 6 200 V applications

The OptiMOS™ 6 200 V needle trench technology was designed for optimal performance in motor drive applications such as e-Scooters, mirco-evs, E-forklifts. Due to its improved RDS(on) and temperature drift, more power can be pushed through the same footprint. Not only is this ideal for reducing the number of paralleled MOSFETs, but also the current sharing is improved by reducing the parametric spread of Vgs(th) by 25% compared to OptiMOS™ 3 and lower transconductance.

In addition, the 42% lower Qrr and Qoss compared to OptiMOS™ 3 result in an improved switching behavior of the new OptiMOS™ 6 200 V, making it an ideal choice for any type of SMPS application such as in server, telecom, or solar. The improved EMI behavior of the device reduces design effort. 

Last but not least, the combination of a wide SOA and a low RDS(on) make this device ideal for static switch applications such as BMS. 

Benefits

The OptiMOS™ 6 200 V needle trench technology has a number of benefits:

  • Low conduction losses
  • Low switching losses
  • Stable operation with improved EMI
  • Less paralleling required
  • Better current sharing when paralleling 
  • RoHS conform, lead free

OptiMOS™ 6 200 V technology

The new OptiMOS™ 6 200 V represents the Infineon state of the art needle trench MOSFET technology. It addresses the need for high power density, high efficiency, and high reliability by offering: 

  • A 42% RDS(on) reduction at room temperature, and as much as 53% reduction at 175°C compared to the previous generation
  • Improved switching performance due to reduced Qrr, Qoss, and improved capacitance linearity.
  • In effect - both conduction and switching losses can be reduced without compromising EMI 
  • The technology features improved SOA to increase the MOSFET current handling in protection switch applications, while design optimizations and production precision make the reliable, high-performing technology the ideal choice for paralleling.

Available in a wide range of packages to meet your design requirements

Infineon’s OptiMOS™ 6 200 V power MOSFETs are available in a wide range of packages to meet your design requirements:

  • TOLL
  • TO-220
  • D2PAK-3pin
  • D2PAK-7pin
  • SuperSO8
  • PQFN 3.3x3.3

OptiMOS™ 6 200 V applications

The OptiMOS™ 6 200 V needle trench technology was designed for optimal performance in motor drive applications such as e-Scooters, mirco-evs, E-forklifts. Due to its improved RDS(on) and temperature drift, more power can be pushed through the same footprint. Not only is this ideal for reducing the number of paralleled MOSFETs, but also the current sharing is improved by reducing the parametric spread of Vgs(th) by 25% compared to OptiMOS™ 3 and lower transconductance.

In addition, the 42% lower Qrr and Qoss compared to OptiMOS™ 3 result in an improved switching behavior of the new OptiMOS™ 6 200 V, making it an ideal choice for any type of SMPS application such as in server, telecom, or solar. The improved EMI behavior of the device reduces design effort. 

Last but not least, the combination of a wide SOA and a low RDS(on) make this device ideal for static switch applications such as BMS. 

Benefits

The OptiMOS™ 6 200 V needle trench technology has a number of benefits:

  • Low conduction losses
  • Low switching losses
  • Stable operation with improved EMI
  • Less paralleling required
  • Better current sharing when paralleling 
  • RoHS conform, lead free

Documents

Documents

Design resources

Developer community

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