Latest Discrete Packages

Overview

TO-247 4pin Kelvin Emitter Package for Discrete IGBTs

The TO-247 4pin Kelvin Emitter package addresses the need for increased power density and space saving in applications striving for high efficiency. Infineon's TO-247PLUS package for high power applications enables up to 120 A IGBT co-packed with a full rated diode in the same footprint and pin-out as JEDEC standard TO-247.

Details

TRENCHSTOP™ Advanced Isolation

The TRENCHSTOP™ Advanced Isolation represent the cutting-edge technology in isolated packages. 35% lower thermal resistance R th(j-h) of advance isolation material compared to high grade Iso-foil enables effective and reliable thermal path from chip to the heatsink.

S5 TRENCHSTOP™ 5 in TO-247 4pin

Highest efficiency at medium speed switching from 10 kHz to 40 kHz with 50 A and 75 A S5 650 V TRENCHSTOP™5 IGBT in TO-247 4pin Kelvin Emitter package.

TO-247PLUS 3pin for 1200 V IGBT

Bigger active chip area of the TO-247PLUS package can accommodate up to 75 A IGBT with 75 A diode in TO-247 footprint. Higher power density of TO-247PLUS can be used to reduce paralleling, increase system power density or system power output.

TO-247PLUS 4pin for 1200 V IGBT

The 4th pin know as Kelvin emitter terminal, bypasses the emitter lead inductance on the gate control loop, enhancing the IGBT’s switching speed and decreasing the switching energy.

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