1ED3121MU12H
5.5 A, 5.7 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 10.5 V UVLO
EiceDRIVER™ Compact single-channel isolated gate driver with 5.5 A typical sinking and sourcing peak output current in DSO-8 wide-body package with large creepage distance (>8 mm) for IGBTs, MOSFETs and SiC MOSFETs.
1ED3121MU12H belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3121 offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.
Summary of Features
- EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 compact family)
- For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- Galvanically isolated coreless transformer gate driver
- 5.5 A typical sinking and sourcing peak output current
- 40 V absolute maximum output supply voltage
- 90 ns propagation delay with 30 ns input filter
- High common-mode transient immunity CMTI >200 kV/μs
- Separate source and sink outputs
- Short-circuit clamping and active shutdown
- DSO-8 300 mil wide-body package with large creepage distance (>8 mm)
- 10.5 V/12.5 V undervoltage lockout (UVLO) protection with hysteresis
Benefits
- Integrated filters reduce the need of external filters
- Tight IC-to-IC turn on propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature
- Suitable for operation at high ambient temperature and in fast switching applications
- UL 1577 VISO = 6.8 kV (rms) for 1 s, 5.7 kV (rms) for 1 min
- Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
- The precise threshold and timings, combined with UL 1577 certification enable superior application safety
- High isolation capability, can be used in 1500 V DC solar inverter application
Find our Variations for EiceDRIVER™ compact 1ED31xx family (X3 compact family)
| Part No | Typ. current | Feature | UVLO | Isolation Certification |
| 1ED3120MU12H | 5.5 A | Separate output | 8/10 V | UL 1577 |
| 1ED3121MU12H | 5.5 A | Separate output | 10.5/12.5 V | UL 1577 |
| 1ED3122MU12H | 10 A | Active Miller clamp | 8/10 V | UL 1577 |
| 1ED3123MU12H | 14 A | Separate output | 8/10 V | UL 1577 |
| 1ED3124MU12H | 14 A | Separate output | 10.5/12.5 V | UL 1577 |
| 1ED3131MU12H | 5.5 A | Separate output, 180 ns input filter | 10.5/12.5 V | UL 1577 |
EiceDRIVER™ Compact Family (including X3C 1ED31xx)
- EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
- The new EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
