Infineon's radiation tolerant N-channel MOSFETs win Gold-Level Innovator Award for space applications

IR HiRel, an Infineon Technologies company, offers industry-leading commercial space solutions for low Earth orbit (LEO) and medium Earth orbit (MEO) missions for mega satellite constellations. We are proud to announce that our radiation tolerant N-channel MOSFETs have won a prestigious Gold-Level Innovators Award from Military + Aerospace Electronics. This recognition validates our commitment to delivering high performance and highly reliable rad hard and rad tolerant semiconductor solutions for mission critical space applications.

Our N-channel MOSFETs are specifically designed to meet the requirements of short-term, 2-5 year, LEO and MEO missions, especially in power related applications, such as power condition units, power distribution units, and DC-DC converters. The N-channel field-effect transistors (FETs) boast a list of competitive advantages. They are single event effects (SEE) tolerant with an LET of 46 MeV∙cm²/mg and a total ionizing dose (TID) of 30 krad(Si). Our patented CoolMOS™ super-junction technology enables our FETs to offer fast switching capabilities. With two voltage options at 60 V and 150 V and surface mount plus through hole packaging options, the N-channel FETs meet common bus voltage requirements and design needs.

No matter your commercial space mission, our N-channel MOSFETs support a wide range of applications. Both qualified to the automotive standard (AEC-Q101) and featuring a temperature range of 40°C to +125°C, our N-channel FETs provide our customers with the competitive edge they need to succeed in the NewSpace market.

Learn more about our radiation tolerant N-channel MOSFETs