OptiMOS™ 7 15 V
Empower the future by unleashing system efficiency and performance with Industry’s newest voltage node
Infineon introduces the first 15 V trench power MOSFETs in the industry, utilizing the brand-new OptiMOS™ 7 technology. This system- and application-optimized technology, targets DC-DC conversion with low output voltages in server and computing applications.
Compared to OptiMOS™ 5 25 V, a lower breakdown voltage leads to a significant reduction in RDS(on) and FOMQg/FOMQOSS. The best-in-class product portfolio comprises PQFN 3.3x3.3 Source-Down packages with bottom- and dual-side cooling variants in Standard- and Center-Gate footprints for flexible and optimal PCB design and a PQFN 2x2 package with a reinforced clip.
The latter offers a pulsed current capability of more than 500 A, with a RthJC of 1.6 K/W. Reducing conduction and switching losses in combination with the Source-Down package, simplifies thermal management, pushing power density and efficiency to the next level.
The product family offers a leap forward to support new trends in power distribution architectures for data centers, e.g. high-ratio DC-DC conversion, opening a new chapter to enable further upscaling in server, datacom, and artificial intelligence applications while minimizing CO2 footprint.
- First 15 V trench power MOSFETs
- Benchmark RDS(on) compared to 25 V node
- Outstanding FOMQg/ FOMQOSS
- Ultra-low package parasitics
- Standard and Center-Gate footprints
- Dual-side cooling variants
