OptiMOS™ 7 switching optimized

Tailored to your needs: The new OptiMOS™ 7 switching optimized power MOSFETs for hard-switching and soft-switching applications

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Overview

Infineon’s OptiMOS™ 7 technology offers an unprecedented level of application-optimization, enabling peak performance in datacenter, AI & telecom. The portfolio includes products optimized for hard-switching and for soft-switching topologies. This approach allows to maximize performance in every specific topology, mitigating power losses, thereby increasing overall efficiency and power density.

Key Features

  • Application-specific optimization
  • Hard- & soft-switching optimized MOSFETs
  • Hard-switch.: Miller ratio,FOM,RDS(on)10
  • ­Soft-switch.:RDS(on)45, FOMg
  • +175°C junction temperature rating
  • Source-down package variants
  • Center-gate footprint available
  • Dual-side cooled & overmolded

Products

About

Key Features and Benefits

 Application-specific optimization for hard- and soft-switching topologies: 

  • Hard-switching optimization with outstanding Miller ratio, excellent RDS(on)10 and FOMQG10
  • Soft-switching optimization with ultra-low RDS(on)45 and improved FOMQG45
  • Superior thermal capabilities with source-down pacakge and up to +175°C junction temperature rating

Hard-switching optimization

Hard-switching optimization with focus on Miller ratio, excellent RDS(on)10 and FOMQG10:

  • Excellent Miller ratio Qgd/Qgs enabling advanced induced turn on ruggedness & immunity against fast rising voltage transients dVDS/dt for reducing switching losses and icnreasing robustness
  • Optimized FOMQoss and FOMQg10 well balanced with RDS(on)10 improvement to reduce driver losses
  • ±16V extended gate voltage rating enabling gate voltage overdrive for fast charge and discharge of the gate capacitance

Soft-switching optimization

Soft-switching optimization with ultra-low RDS(on)45 and improved FOMQG45: 

  • Ultra low RDS(on)45 reducing conduction losses and increasing output power rating
  • Reduced threshold voltage enabling lower driving voltage to ease gate driving for higher efficiency 
Get the App Note: OptiMOS™ 7 25 V optimizations

Available Packages

OptiMOS™ 7 switching optimized power MOSFETs are available in following packages, depending on voltage class:

  • PQFN 3.3x3.3 Source-Down Center Gate
  • PQFN 3.3x3.3 Source-Down Center Gate Dual-side cooled
  • PQFN 2.0x2.0

Key Features and Benefits

 Application-specific optimization for hard- and soft-switching topologies: 

  • Hard-switching optimization with outstanding Miller ratio, excellent RDS(on)10 and FOMQG10
  • Soft-switching optimization with ultra-low RDS(on)45 and improved FOMQG45
  • Superior thermal capabilities with source-down pacakge and up to +175°C junction temperature rating

Hard-switching optimization

Hard-switching optimization with focus on Miller ratio, excellent RDS(on)10 and FOMQG10:

  • Excellent Miller ratio Qgd/Qgs enabling advanced induced turn on ruggedness & immunity against fast rising voltage transients dVDS/dt for reducing switching losses and icnreasing robustness
  • Optimized FOMQoss and FOMQg10 well balanced with RDS(on)10 improvement to reduce driver losses
  • ±16V extended gate voltage rating enabling gate voltage overdrive for fast charge and discharge of the gate capacitance

Soft-switching optimization

Soft-switching optimization with ultra-low RDS(on)45 and improved FOMQG45: 

  • Ultra low RDS(on)45 reducing conduction losses and increasing output power rating
  • Reduced threshold voltage enabling lower driving voltage to ease gate driving for higher efficiency 
Get the App Note: OptiMOS™ 7 25 V optimizations

Available Packages

OptiMOS™ 7 switching optimized power MOSFETs are available in following packages, depending on voltage class:

  • PQFN 3.3x3.3 Source-Down Center Gate
  • PQFN 3.3x3.3 Source-Down Center Gate Dual-side cooled
  • PQFN 2.0x2.0

Documents

Documents

Developer community

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