Gate Driver ICs
Every switch needs a driver – the right driver makes a difference
Power electronics applications employ power device switches. And power device switches require optimum gate drive solutions. That’s why we offer more than 500 EiceDRIVER™ gate driver solutions for use with silicon and wide-bandgap power devices, such as MOSFETs, IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs, and for hundreds of end applications.
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Infineon EiceDRIVER™ gate driver IC technologies
Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers.
Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options.
State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.
Our EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode(BSD), over current protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation(functional, basic and reinforced), etc.
Ideal solutions are available for hundreds of end applications in such markets as automotive, industrial motor drives, solar inverters, EV charging, robotics, UPS, server and telecom power supply, small and major home appliances, battery-driven applications, and high-voltage lighting.