Active and preferred
RoHS Compliant

IPB133N12NM6

OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package
Data Sheet
package

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IPB133N12NM6
IPB133N12NM6
Data Sheet

Product details

  • ID (@25°C) max
    55 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK (TO-263)
  • Polarity
    N
  • QG (typ @10V)
    15 nC
  • RDS (on) (@10V) max
    13.3 mΩ
  • VDS max
    120 V
  • VGS(th)
    3.1 V
Recommended
OPN
IPB133N12NM6ATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
This is a normal level 120 V MOSFET in D²PAK 3-pin packaging with 13.3 mOhm on-resistance. IPB133N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

Features

  • Compared to OptiMOS™ the technology features:
  • up to 40% better RDS(on)
  • up to 50% better FOMg
  • up to 50% better Qrr

Benefits

  • Very low on-resistance
  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant
  • Halogen-free
  • MSL1 classified

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