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Infineon to establish the world’s first high-volume manufacturing facility for gallium nitride power semiconductors on 300-millimeter wafers in Europe
Infineon to establish the world’s first high-volume manufacturing facility for gallium nitride power semiconductors on 300-millimeter wafers in Europe
Business & Financial Press
- Investment of around €1.1 billion in the Villach site as a global competence center for power semiconductors
- Next-generation power semiconductors to meet growing demand for energy-efficient chips, including AI data centers, energy infrastructure, e-mobility and robotics
- Ramp-up aligned with market demand
- €319 million in funding under the European Chips Act to strengthen technological sovereignty
Munich, Germany/Vienna, Austria – 27 October 2026 – Infineon Technologies AG is establishing the world’s first high-volume manufacturing facility for next-generation gallium nitride (GaN) power semiconductors on 300-millimeter wafers in Europe. As part of the project, Infineon will invest around €1.1 billion in its existing cleanroom facilities at the Villach site by 2034. Leveraging both the existing and upgraded infrastructure will enable highly efficient and cost-effective expansion of manufacturing capacity. Production is scheduled to start by the end of 2027. Infineon’s investment addresses the rapidly growing demand for high-performance power supply solutions. Gallium nitride enables significant efficiency gains in numerous applications, such as AI data centers, energy infrastructure, e-mobility, robotics and consumer electronics.
Infineon is a leader in gallium nitride power electronics. Two years ago, Infineon achieved a technological milestone by successfully processing the world’s first 300-millimeter gallium nitride wafers. Chip production on 300-millimeter wafers is more advanced and significantly more efficient than 200-millimeter wafer production, since the larger wafer diameter yields 2.3 times as many chips per wafer. Infineon is now transferring this technology to the world’s first high-volume manufacturing facility serving customers.
“This substantial investment shows our clear commitment to strengthening the European semiconductor ecosystem and Europe’s technological sovereignty. By establishing high-volume manufacturing on 300-millimeter wafers, we will be the first company in the world to bring gallium nitride power electronics into volume production,” says Jochen Hanebeck, CEO of Infineon Technologies AG. “In doing so, we are paving the way for the widespread use of gallium nitride in a wide range of key applications in areas such as artificial intelligence, energy infrastructure, e-mobility and robotics. This new, state-of-the-art manufacturing facility translates innovation leadership into direct customer benefits.”
Christian Stocker, Federal Chancellor of the Republic of Austria: “With Infineon’s billion-euro investment, we are witnessing one of the largest single investments in the history of Austria’s high-tech industry. This is not only a strong commitment to Austria as a business location but also helps ensure that the future of the semiconductor industry will not be shaped solely in Asia or the United States, but also in Austria and Europe. Villach will thus become home to a globally unique production facility for one of the key technologies that will shape the future. This will strengthen our international competitiveness and secure jobs and value creation in Austria. After all, Austria may not be a country with unlimited natural resources, but it is a country with an unlimited wealth of talent. Our cutting-edge research sets international standards, and companies such as Infineon demonstrate every day how innovation made in Austria works. These are precisely the strengths we want to build on with our industrial strategy so that, by 2035, Austria will once again rank among the world’s top ten industrial nations.”
Wolfgang Hattmannsdorfer, Austrian Federal Minister for Economic Affairs: “Chips are as important to tomorrow’s economy as oil was to yesterday’s. Europe currently accounts for only around 10 percent of global chip production. For me, the conclusion is clear: We must also manufacture this key technology in Europe. Austria is already a leader in energy-efficient chips. Relative to our population, we rank first in the EU in business R&D spending in the semiconductor sector. With our industrial strategy, we intend to build on this lead and not only research new technologies but also manufacture them on an industrial scale. This benefits the entire economy: Statistically, every job in the chip industry can provide six additional jobs across the broader economy. That is why we intend to support Infineon’s new chip production with up to 319 million euros - subject to clear funding criteria for the location. This will ensure that public funds strengthen value creation and jobs in Austria over the long term.”
The investment in this first-of-a-kind technology is being supported under the European Chips Act. The European Commission approved €319 million in state aid. The formal funding commitment by the Austrian Federal Ministry for Economic Affairs, Energy and Tourism is expected within the stipulated time limits. By approving the funding from the Federal Ministry for Economic Affairs, Energy and Tourism, the European Commission is not only enabling the expansion of manufacturing capacities in Europe but is also generating positive spillover effects in related sectors – for example, through cross-border collaboration with universities and research institutions and improved access to innovative technologies and products for start-ups and small and medium-sized enterprises.
“Competitiveness and technological sovereignty emerge where excellent research is translated into industrial value creation. This is precisely where our flagship project comes in: From Austria, we are bringing innovation into industrial application, strengthening our technological leadership and securing highly skilled jobs. Microelectronics is a key industry with enormous leverage for the economy and society. The entire Austrian semiconductor ecosystem benefits – from research organizations and universities to industrial partners. We are thus sustainably strengthening Europe’s competitiveness and strategic autonomy in microelectronics,” emphasizes Sabine Herlitschka, CEO of Infineon Technologies Austria AG.
The investment strengthens Villach’s role as a global competence center for power electronics and new semiconductor materials. Infineon Austria currently employs around 5,800 people, approximately 4,800 of them at the Villach[1] site. Together with universities, research institutions, start-ups and industry partners, Infineon forms the core of an internationally recognized microelectronics ecosystem in southern Austria. The establishment of the new 300-millimeter GaN manufacturing facility will also create positive synergies with the power electronics research and development activities located in Villach.
Gallium nitride is an advanced semiconductor material that can switch and convert electricity much more efficiently. This enables smaller, more powerful and more energy-efficient electronic systems with lower energy loss and reduced heat generation. Analysts expect the market for GaN power semiconductors to grow to approximately USD 3.5 billion by 2031, representing annual growth of around 35 percent between 2025 and 2031.[2]
[1] Fiscal year 2025, as of September 30, 2025
[2] Yole Group: Power GaN 2026 report. https://www.yolegroup.com/product/report/power-gan-2026/
Images from the press briefing will be available here starting at approximately 9:15 a.m. CET: https://www.apa-fotoservice.at/galerie/40217
Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 57,000 employees worldwide (end of September 2025) and generated revenue of about €14.7 billion in the 2025 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).
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Next-generation gallium nitride (GaN) power semiconductors on 300-millimeter wafer
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Information Number : infpr202610-021