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IRHNKC63C30
Product details
-
Die Size3
-
GenerationR6
-
ID (@25°C) max3.4 A
-
Optional TID Rating (kRad(si))100 300
-
PackageSMD-0.5e
-
QG52 nC
-
RDS (on) (@25°C) max3.1 Ω
-
TID max300 Krad(Si)
-
VBRDSS600 V
-
VF max1.2 V
| Recommended | |
|
OPN
|
|
| Product Status | active and preferred |
| Infineon Package | |
| Package Name | Enhanced SMD0.5 |
| Packing Size | N/A |
| Packing Type | N/A |
| Moisture Level | N/A |
| Moisture Packing | N/A |
| Lead-free | No |
| Halogen Free | Yes |
| RoHS Compliant | No |
|
|
|
| Product Status |
Active
|
|---|---|
| Infineon Package | |
| Package Name | Enhanced SMD0.5 |
| Packing Size | 0 |
| Packing Type | |
| Moisture Level | - |
| Moisture Packing | |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
Rad hard, 600 V, 3.5 A, N-channel MOSFET, R6 in SMD-0.5e Ceramic Lid package - 300 krad(Si) TID, COTS
Features
- Single event effect (SEE) hardened
- Low RDS(on)
- Fast switching
- Low total gate charge
- Simple drive requirements
- Hermetically sealed
- Ceramic package
- Light weight
- Surface mount
- ESD rating: Class 2 (MIL-STD-750, 1020)
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