Active and preferred
RoHS Compliant

IQE031N08LM6CGSC

OptiMOS™ 6 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package with industry leading RDS(on)
Data Sheet
package
ea.
in stock

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IQE031N08LM6CGSC
IQE031N08LM6CGSC
ea.
Data Sheet

Product details

  • ID (@25°C) max
    127 A
  • IDpuls max
    508 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @4.5V)
    26 nC
  • QG (typ @10V)
    54 nC
  • RDS (on) (@10V) max
    3.15 mΩ
  • RDS (on) (@4.5V) max
    4 mΩ
  • Special Features
    Logic Level, Center Gate Dual Side Cooling
  • VDS max
    80 V
  • VGS(th) range
    1.1 V to 2.3 V
  • VGS(th)
    1.7 V
Recommended
OPN
IQE031N08LM6CGSCATMA1
Product Status active and preferred
Infineon Package
PG-WHTFN-9
Package Name N/A
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-WHTFN-9
Package Name -
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IQE031N08LM6CGSC is Infineon’s new best-in-class OptiMOS™ 6 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization.

Features

  • Logic level allows lower Qrr and QOSS
  • Center Gate optimized for paralleling
  • Up to 35% lower RDS(on) vs previous Gen
  • New, optimized layout possibilities

Benefits

  • Enables highest power density & performance
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
  • Improved PCB losses

Documents

Documents

Design resources

Partner solutions

Developer community

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