IJCQ120RM61J1
coming soon
coming soon
RoHS Compliant
Lead-free

IJCQ120RM61J1

CoolSiC™ JFET discrete 1200 V G1 in top-side cooled Q-DPAK package
Datasheet
package

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IJCQ120RM61J1
IJCQ120RM61J1
Datasheet


Product details

  • ID (@25°C) max
    504 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    Q-DPAK
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    6.1 mΩ
  • Technology
    CoolSiC™ JFET
  • VDS max
    1200 V

OPN
IJCQ120RM61J1XTMA1
Product Status coming soon
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT,MY

Product Status coming soon
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT,MY
CoolSiC™ JFET 1200 V in a Q-DPAK top-side-cooled package. Its low 6.1 mΩ typical RDS enables efficient current conduction in solid-state power-distribution and protection applications. High-current avalanche and surge-current ruggedness, linear-mode capability and overload operation up to a junction temperature of 200°C support demanding protection functions. The surface-mount package enables automated assembly and flexible top-side cooling.

Features

  • 1200 V drain-source blocking voltage
  • Ultra-low RDS
  • Normally-on SiC JFET technology
  • High-current avalanche ruggedness
  • Surge-current ruggedness
  • Linear-mode capability
  • Overload operation up to Tj = 200°C
  • Q-DPAK top-side-cooled package
  • compatible with automated assembly

Benefits

  • Minimized conduction losses
  • Reduced thermal-management effort
  • Higher power density
  • Robust overload/ surge-current handling
  • Rugged inductive fault-energy handling
  • Support for linear-mode protection
  • Compact, automated system assembly

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