CY62177G30-55BAXI
Active and preferred
RoHS Compliant
Lead-free

CY62177G30-55BAXI

Datasheet
package

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CY62177G30-55BAXI
CY62177G30-55BAXI
Datasheet


Product details

  • Alarms
    N
  • Density
    32 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    2M x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Real Time Clock
    N
  • Speed
    55 ns
  • Watchdog Timer
    N

Recommended
OPN
CY62177G30-55BAXI
Product Status active and preferred
Infineon Package
PG-TFBGA-48
Package Name FBGA-48 (51-85191)
Packing Size 210
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
TW
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TFBGA-48
Package Name FBGA-48 (51-85191)
Packing Size 210
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
TW
CY62177G30-55BAXI is a 32-Mbit MoBL static SRAM with embedded ECC for single-bit error correction, organized as 2M words × 16-bit. It operates from 2.2 V to 3.6 V over -40°C to 85°C with 55 ns access. Automatic power-down supports 3 µA typical and 19 µA max standby current. Dual chip enable, 48-ball FBGA package, TTL-compatible I/O for low-power memory in industrial embedded systems.

Features

  • 16-Mbit SRAM, 1M x 16 or 2M x 8
  • Embedded ECC corrects 1-bit errors
  • ERR pin flags ECC events (GE30)
  • 55 ns read cycle time (tRC)
  • OE to data valid 25 ns max (tDOE)
  • VCC operating range 2.2 V to 3.6 V
  • 3 µA typ standby, 19 µA max
  • Data retention at 1.5 V
  • ICCDR 3 µA typ, 19 µA max
  • Byte writes via BHE/BLE signals
  • Automatic power-down (ISB1/ISB2)
  • High-Z outputs when deselected

Benefits

  • ECC reduces soft error corruption
  • ERR output eases health monitoring
  • 55 ns access supports fast SRAM reads
  • 25 ns OE timing eases bus timing
  • 2.2–3.6 V VCC fits 3.3 V rails
  • Ultra-low standby cuts idle power
  • 1.5 V retention preserves data off
  • Low ICCDR extends backup supply
  • Byte enables reduce write traffic
  • Auto power-down saves energy
  • High-Z outputs enable bus sharing
  • 16/8-bit modes ease system reuse

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