CY62167EV30LL-45BVI
Active and preferred

CY62167EV30LL-45BVI

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62167EV30LL-45BVI
CY62167EV30LL-45BVI


Product details

  • Density
    16 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Pb
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    1M x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial

OPN
CY62167EV30LL-45BVI
Product Status active and preferred
Infineon Package
Package Name BGA-48 (51-85150)
Packing Size 4800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant No
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name BGA-48 (51-85150)
Packing Size 4800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
The CY62167EV30LL-45BVI is a 16-Mbit CMOS asynchronous SRAM organized as 1M × 16 or 2M × 8 with BLE/BHE byte enables for 8-bit writes. It operates from 2.2 V to 3.6 V across –40°C to +85°C and supports 45 ns access. Typical active current is 7 mA at 1 MHz, and automatic power-down reduces standby to 1.5 µA (12 µA max) when deselected.

Features

  • 16-Mbit SRAM: 1M×16 or 2M×8
  • 45 ns read/write cycle time
  • OE access time 22 ns max
  • 2.2 V to 3.6 V single-supply
  • Auto power-down on deselect
  • Active current 7 mA typ at 1 MHz
  • Standby current 1.5 µA typ
  • Max standby current 12 µA
  • Data retention at VCC down to 1.5 V
  • Data retention current 10 µA max
  • 10 pF max input/output capacitance
  • Tri-state outputs via OE/CE/BHE/BLE

Benefits

  • Fits x16 or x8 bus architectures
  • 45 ns timing supports fast CPUs
  • 22 ns OE cuts read access delay
  • 2.2-3.6 V works with 3 V rails
  • Auto power-down saves energy
  • 7 mA typ reduces active power
  • 1.5 µA standby extends battery life
  • 12 µA max eases power budgeting
  • 1.5 V retention keeps data in sleep
  • 10 µA max enables long backup
  • 10 pF loads simplify signal timing
  • Tri-state I/O eases bus sharing

Applications

Documents

Design resources

Developer community