CY62157EV30LL-45BVXIT
Active and preferred
RoHS Compliant
Lead-free

CY62157EV30LL-45BVXIT

Datasheet
package
ea.
in stock

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CY62157EV30LL-45BVXIT
CY62157EV30LL-45BVXIT
ea.
Datasheet


Product details

  • Density
    8 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    512K x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial

Recommended
OPN
CY62157EV30LL-45BVXIT
Product Status active and preferred
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
TW,US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
TW,US
ea.
in stock
CY62157EV30LL-45BVXIT is an 8-Mbit (512K × 16) CMOS SRAM optimized for low power. It operates from 2.2 V to 3.6 V with 45 ns access. Typical active current is 6 mA at 1 MHz (7 mA max) and ICC is 18 mA typical at fmax (25 mA max). Automatic CE power-down reduces standby to 2 µA typical (8 µA max). Supports byte enables (BHE, BLE) for 8-bit writes. -40 to +85°C Industrial, 48-ball Pb-free VFBGA, tape-and-reel.

Features

  • 8-Mbit SRAM, 512K × 16
  • Configurable 512K×16 or 1M×8
  • 45 ns read cycle time (tRC)
  • 22 ns OE to data valid (tDOE)
  • 2.20 V to 3.60 V VCC range
  • 2 µA typ standby current (ISB)
  • 6 mA typ active at 1 MHz
  • Auto power-down when deselected
  • Byte enables BHE/BLE for 8-bit
  • High-Z outputs when deselected
  • Data retention at 1.5 V VDR
  • 10 pF max input/output capacitance

Benefits

  • 8-Mbit density saves board space
  • 1M×8 option eases bus matching
  • 45 ns access supports fast CPUs
  • 22 ns OE enables quick reads
  • 2.2–3.6 V fits common rails
  • 2 µA standby extends battery life
  • 6 mA active cuts run power
  • Auto power-down reduces idle drain
  • Byte writes avoid read-modify-write
  • High-Z I/O simplifies bus sharing
  • 1.5 V retention keeps data in sleep
  • 10 pF I/O eases signal integrity
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