CY62157EV18LL-55BVXI
Active and preferred
RoHS Compliant
Lead-free

CY62157EV18LL-55BVXI

ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62157EV18LL-55BVXI
CY62157EV18LL-55BVXI
ea.

Product details

  • Density
    8 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    1.65 V to 2.25 V
  • Organization (X x Y)
    512K x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
OPN
CY62157EV18LL-55BVXI
Product Status active and preferred
Infineon Package
Package Name VFBGA-48 (51-85150)
Packing Size 2400
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name VFBGA-48 (51-85150)
Packing Size 2400
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62157EV18LL-55BVXI is an 8-Mbit (512K × 16) CMOS SRAM for battery-powered designs such as portable electronics. It operates from 1.65 V to 2.25 V and guarantees 55 ns access. Typical active current is 6 mA at 1 MHz (7 mA max), and standby is 2 µA (8 µA max) with automatic power-down when deselected. BHE/BLE byte enables support 8-bit accesses. Pb-free 48-ball VFBGA, industrial -40°C to +85°C.

Features

  • 8-Mbit SRAM organized 512K x 16
  • 55 ns read/write cycle (tRC/tWC)
  • Single-supply VCC 1.65 V to 2.25 V
  • 6 mA active current at 1 MHz
  • 2 uA standby (ISB), 8 uA max
  • Data retention to VCC = 1.0 V
  • Data retention current 9 uA max
  • OE-controlled tri-state outputs
  • Dual chip enable inputs CE1/CE2
  • Byte write via BHE and BLE pins

Benefits

  • Fits 16-bit systems with no glue
  • 55 ns cycles support fast access
  • Runs from 1.8 V-class rails
  • Lower active power in SRAM reads
  • Extends battery life in standby
  • Keeps data with backup supply
  • Low retention current saves energy
  • Simplifies bus sharing on outputs
  • Easy expansion with CE1/CE2
  • Updates 8-bit bytes, less writes

Applications

Documents

Design resources

Developer community