CY62128ELL-55SXET
Active and preferred
RoHS Compliant

CY62128ELL-55SXET

Datasheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62128ELL-55SXET
CY62128ELL-55SXET
ea.
Datasheet

Product details

  • Density
    1 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) max
    5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    128K x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Automotive
  • Speed
    55 ns
Recommended
OPN
CY62128ELL-55SXET
Product Status active and preferred
Infineon Package
PG-DSO-32
Package Name SOIC-32 (51-85081)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-32
Package Name SOIC-32 (51-85081)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62128ELL-55SXET is a 1-Mbit (128 K × 8) CMOS static RAM for 4.5 V to 5.5 V systems with 55 ns access (Automotive-E). It operates from –40°C to +125°C, uses TTL input levels (VIH min 2.2 V), and supports easy memory expansion via CE1, CE2, and OE controls. Automatic CE power-down reduces standby to ISB2 typ 1 µA (max 30 µA). Active ICC is typ 1.3 mA at 1 MHz and 11 mA at fmax, VCC(max).

Features

  • 128K × 8 SRAM organization
  • 45 ns read cycle time (tRC)
  • 4.5 V to 5.5 V VCC operation
  • 1.3 mA typ ICC at 1 MHz
  • 1 µA typ standby current
  • Auto CE power-down (ISB2)
  • CE1/CE2 and OE chip controls
  • High-Z outputs when deselected
  • TTL-compatible input levels
  • VIH 2.2 V, VIL 0.8 V thresholds
  • 10 pF max input capacitance
  • tDOE 22 ns OE to data valid

Benefits

  • Fast 45 ns cycles cut latency
  • 5 V supply fits legacy designs
  • 1.3 mA typ lowers active power
  • 1 µA standby extends battery life
  • Auto power-down saves idle energy
  • CE1/CE2 simplify memory expansion
  • High-Z outputs ease bus sharing
  • TTL levels ease MCU/CPU interface
  • Defined thresholds reduce errors
  • Low capacitance eases timing margins
  • 22 ns OE read improves response
  • Lower standby cuts thermal load

Applications

Documents

Design resources

Partner solutions

Developer community