CY62126EV30LL-55BVXE
Active and preferred
RoHS Compliant
Lead-free

CY62126EV30LL-55BVXE

Datasheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62126EV30LL-55BVXE
CY62126EV30LL-55BVXE
Datasheet


Product details

  • Density
    1 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    64K x 16
  • Peak Reflow Temp
    260 °C
  • Qualification
    Automotive
  • Speed
    55 ns

Recommended
OPN
CY62126EV30LL-55BVXE
Product Status active and preferred
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85150)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY62126EV30LL-55BVXE is a 1-Mbit (64 K × 16) CMOS asynchronous SRAM for battery-powered and embedded systems. Automotive-E grade operation from 2.2 V to 3.6 V over -40°C to 125°C is specified with 55 ns speed. It supports byte writes via BLE/BHE, high-Z I/Os when deselected, and automatic CE power-down to cut standby to 1 µA typical (30 µA max), with 1.3 mA typical active current at 1 MHz.

Features

  • 1-Mbit SRAM organized as 64K × 16
  • 45 ns read/write cycle time
  • 2.2 V to 3.6 V single-supply VCC
  • 1.3 mA typ active at 1 MHz
  • 4 µA max standby current
  • Auto power-down when addr static
  • Data retention at VCC down to 1.5 V
  • 3 µA max data-retention current
  • Byte write via BLE/BHE controls
  • Tri-state I/O via CE/OE/BHE/BLE

Benefits

  • 16-bit bus cuts MCU accesses
  • 45 ns suits fast SRAM interfaces
  • 2.2–3.6 V fits 3 V systems
  • Low active current extends runtime
  • µA standby minimizes sleep drain
  • Auto power-down saves idle power
  • 1.5 V retain data in deep sleep
  • Low ICCDR reduces backup load
  • Byte writes reduce write energy
  • Tri-state eases bus sharing/expand

Applications

Documents

Design resources

Partner solutions

Developer community