BFP640
Overview
Summary of Features
- High gain low noise RF transistor
- Provides outstanding performance for a wide range of wireless applications
- Ideal for CDMA and WLAN applications
- Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz
- High maximum stable gain :Gms = 24 dB at 1.8 GHz
- Gold metallization for extra high reliability
- 70 GHz fT-Silicon Germanium technology
- Pb-free (RoHS compliant) package
Support
