EVAL_HB_GAN_HYBRID
Overview
CoolGaN™ hybrid driving evaluation board with EiceDRIVER™ 1EDB7275F and 1EDN7550B
EVAL_HB_GAN_HYBRID to evaluate hybrid driving together with CoolGaN™ gate injection (GIT) high electron mobility transistors (HEMTs) in high-voltage (HV) half-bridge (HB) configuration to achieve a low bill of materials (BOM) and a cost-effective solution to drive a non-isolated HB stage.
Summary of Features
- Enables testing of GIT & Schottky gates
- Configurable power stage
- Suitable for double pulse testing
- Hardware shoot through protection
- Adjustable bias with negative voltage
Benefits
- Cost-effective driving with high CMTI
- Flexible single channel solution
- Better optimization of driving loop possible
- Bias for GIT and SG with minor BOM changes
- System cost reduction savings
List of components
Support
