EB 2ED2410 3D 1BCSP EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common source, pre-charging

Overview

This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.

This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common source configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.

Following other daughterboards are available:

  • EB 2ED2410 3D 1BCS:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt

  • EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt

  • EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging

Summary of Features

  • Suitable for 12 and 24 V board nets
  • Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
  • 0,5 mOhm shunt resistor
  • 60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
  • MOSFET temperature monitoring with NTC resistors
  • Dedicated pre-charge path for loads with high input capacitance
  • Nominal current up to 20 A continuous or 30 A for 10 min
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