Overview

The 650 V TRENCHSTOP™ 5 F5 Discrete IGBT family features significantly lower switching losses compared to currently leading solutions and is the bridge between IGBTs and MOSFETs. Targeting topologies are boost stages, PFC (AC-DC) stages, and high-voltage DC-DC topologies.

Key features
  • Low switchig losses
  • 650 V breakthrough voltage
  • Temperature stability of vf
  • Low COES/EOSS
Applications
Power conversion
Uninterruptible power supplies(UPS)

Products

About

About TRENCHSTOP™ 5 F5

The 650 V TRENCHSTOP™ 5 F5 family is targeted for low-inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to the 650 V TRENCHSTOP™ 5 H5 family. The F5 family products require higher design in effort, but rewards are higher.

Key features

This product family offers a number of special features, including a 650 V breakdown voltage and, compared to Infineon's best-in-class HighSpeed 3 family, a 2.5 lower Qg factor, reduced switching losses by a factor of 2 and a 200 mV reduction in VCE(sat). In addition, the products are copacked with Infineon's Rapid Si diode technology, have low COES/EOSS, a mild positive temperature coefficient VCE(sat), and offer temperature stability of Vf.

Key benefits

The advantages of the TRENCHSTOP™ 5 F5 products are best-in-class efficiency, resulting in lower junction and case temperatures and thus higher device reliability, and a possible 50 V increase in bus voltage without compromising the reliability, and a compelling design with higher power density.

About TRENCHSTOP™ 5 F5

The 650 V TRENCHSTOP™ 5 F5 family is targeted for low-inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to the 650 V TRENCHSTOP™ 5 H5 family. The F5 family products require higher design in effort, but rewards are higher.

Key features

This product family offers a number of special features, including a 650 V breakdown voltage and, compared to Infineon's best-in-class HighSpeed 3 family, a 2.5 lower Qg factor, reduced switching losses by a factor of 2 and a 200 mV reduction in VCE(sat). In addition, the products are copacked with Infineon's Rapid Si diode technology, have low COES/EOSS, a mild positive temperature coefficient VCE(sat), and offer temperature stability of Vf.

Key benefits

The advantages of the TRENCHSTOP™ 5 F5 products are best-in-class efficiency, resulting in lower junction and case temperatures and thus higher device reliability, and a possible 50 V increase in bus voltage without compromising the reliability, and a compelling design with higher power density.

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