The L5 low saturation voltage (VCE(sat)) TRENCHSTOP™ 5 IGBT family has been optimized for low switching frequencies from 50 Hz to 20 kHz. It offers low VCE(sat) of 1.05 V for 30 A IGBTs, lowest switching losses in reactive power mode at cos φ<1 and high thermal stability of electrical parameters. The low conduction losses of the 55 µm TRENCHSTOP™ 5 thin wafer technology have been reduced further with optimization of the carrier profile.

  • Lowest saturation voltage VCE(sat)
  • Low switching losses
  • High thermal stability
  • Enhanced efficiency

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The mild positive temperature coefficient of VCE(sat) with only 2 percent drift under temperature change from 25°C to 175°C allows easy paralleling, keeping the efficiency high. High efficiency and low switching losses of the L5 IGBT simplifies thermal management, allowing to reduce the cooling infrastructure, using less heat sink and a smaller fan, thus significantly lowering the manufacturing costs.

TRENCHSTOP™ 5 L5 incorporates important key features such as the lowest saturation voltage VCE(sat) of only 1.05 V, low switching losses of 1.6 mJ at 25°C for 30 A IGBT, high thermal stability of electrical parameters (only 2 percent drift with Tj increase from 25°C to 175°C), and enhanced efficiency for 20 percent lower switching losses in TO-247 4pin Kelvin emitter package.

Among other things, the key benefits are the higher efficiency for 50 Hz, longer lifetime and higher reliability of the IGBT, and high design reliability due to stable thermal performance.

The mild positive temperature coefficient of VCE(sat) with only 2 percent drift under temperature change from 25°C to 175°C allows easy paralleling, keeping the efficiency high. High efficiency and low switching losses of the L5 IGBT simplifies thermal management, allowing to reduce the cooling infrastructure, using less heat sink and a smaller fan, thus significantly lowering the manufacturing costs.

TRENCHSTOP™ 5 L5 incorporates important key features such as the lowest saturation voltage VCE(sat) of only 1.05 V, low switching losses of 1.6 mJ at 25°C for 30 A IGBT, high thermal stability of electrical parameters (only 2 percent drift with Tj increase from 25°C to 175°C), and enhanced efficiency for 20 percent lower switching losses in TO-247 4pin Kelvin emitter package.

Among other things, the key benefits are the higher efficiency for 50 Hz, longer lifetime and higher reliability of the IGBT, and high design reliability due to stable thermal performance.

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