650 V CoolMOS™ 8

The high voltage super-junction MOSFET family combines the best of 650V CoolMOS™ 7 technologies

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Overview

The 650 V CoolMOS™ 8 is Infineon’s latest high voltage super-junction MOSFET technology. It comes with integrated fast body diode targeting a broad variety of applications. It focuses on high power applications, such as server, telecom, solid state circuit breakers, solid state relays and EV charging stations.

Key Features

  • Fits for hard & soft switching
  • Lower switching & conduction losses
  • Best silicon RDS(on) *A technology
  • Advanced interconnect technology
  • Integrated fast body diode

Products

About

About 650 V CoolMOS™ 8

650 V CoolMOS™ 8 comes with an efficiency improvement over its predecessor. Also, it enhances the 600 V CoolMOS™ 8 portfolio.

650 V and 600 V CoolMOS™ 8 have a similar performance in high line as well as low line. Full load performance difference between 600 V and 650 V mainly coming from conduction losses driven by RDS(on).

Key features:

  • Fits for hard & soft switching
  • Lower switching & conduction losses
  • Advanced interconnect technology
  • Integrated fast body diode
  • Best silicon RDS(on)*A technology

Application usage: best suited for both hard and soft switching

CoolMOS™ 8 offers highest efficiency and best-in-class (BiC) reliability in soft switching topologies such as PFC and LLC. Furthermore, it offers an outstanding level of performance in both PFC and LLC topologies.

In addition, CoolMOS™ 8 enables higher power density thanks to its optimized RDS(on) which allows us to bring our BiC product down to a single digit of 8 mOhm and enables cost attractive Si-based solutions, complementing our wide band gap (WBG) offerings.

Key applications

About 650 V CoolMOS™ 8

650 V CoolMOS™ 8 comes with an efficiency improvement over its predecessor. Also, it enhances the 600 V CoolMOS™ 8 portfolio.

650 V and 600 V CoolMOS™ 8 have a similar performance in high line as well as low line. Full load performance difference between 600 V and 650 V mainly coming from conduction losses driven by RDS(on).

Key features:

  • Fits for hard & soft switching
  • Lower switching & conduction losses
  • Advanced interconnect technology
  • Integrated fast body diode
  • Best silicon RDS(on)*A technology

Application usage: best suited for both hard and soft switching

CoolMOS™ 8 offers highest efficiency and best-in-class (BiC) reliability in soft switching topologies such as PFC and LLC. Furthermore, it offers an outstanding level of performance in both PFC and LLC topologies.

In addition, CoolMOS™ 8 enables higher power density thanks to its optimized RDS(on) which allows us to bring our BiC product down to a single digit of 8 mOhm and enables cost attractive Si-based solutions, complementing our wide band gap (WBG) offerings.

Documents

Documents

Design resources

Developer community

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