From trench technology to system reliability: what sets CoolSiC™ modules apart

Infineon’s silicon carbide (SiC) modules help engineers increase efficiency, power density, and reliability in high-power applications. This value comes from a combination of CoolSiC™ technology, advanced packaging, .XT interconnection technology, proven reliability, large-scale manufacturing, supply-chain resilience, and decades of experience in SiC applications.

These advantages are especially valuable in DC EV charging, photovoltaic (PV), energy storage (ESS), uninterruptible power supplies (UPS), and traction applications, where reducing losses, increasing power density, and improving thermal performance are key priorities. 

What is an online double-conversion UPS, and where is SiC used?

An online double-conversion UPS continuously processes power through an AC-DC rectifier and a DC-AC inverter, delivering a stable and clean AC output to critical loads regardless of input power disturbances. Many systems also include a bidirectional DC-DC converter that manages energy flow between the battery storage system and the DC link.

SiC power modules can be implemented in all major power-conversion stages, including the active front end (AFE), inverter, and bidirectional battery converter. By enabling higher efficiency and power density, SiC helps optimize UPS performance while reducing energy losses and thermal management requirements.

Infineon’s trench-based SiC MOSFET architecture

Trench-based SiC MOSFET architecture

Why this matters

Lower RDS(on) helps reduce conduction losses, while higher thermal headroom gives designers more options for increasing output power, reducing cooling effort, or improving margin. 

Source: Infineon - Silicon carbide power modules in new EasyPACK™ C package enhance efficiency and lifetime of industrial applications. 

In a nutshell, Infineon continuously builds on its experience in SiC technology to advance the performance, robustness, and system value of each CoolSiC™ generation. CoolSiC™ MOSFET M2 continues this innovation path with further developments in chip technology, packaging, and interconnection.

How .XT interconnection improves SiC module lifetime

Power modules fail or age not only because of semiconductor behavior, but also because repeated heating and cooling stresses the die attach, bond connections, substrate, and other package interfaces.

In modules, Infineon’s .XT technology combines a highly reliable sintered die attach with copper front-side bond interconnection, improving thermal performance and power-cycling capability.

While .XT in discrete devices is based on diffusion-solder technology between the chip and lead frame, in power modules it refers to this combination of sintering and copper interconnection. This is a key contributor to the technology’s lifetime and reliability expectations.

In power modules, .XT technology results in more than 20× power-cycling capability versus standard interconnection technology under specified conditions, including Tvj,max = 175°C, ΔTvj = 100 K, and tcyc ≤ 3 s.

Combined with .XT interconnection technology, CoolSiC™ M2 enables more than 30% higher power density, up to 20× longer lifetime, and around 25% lower RDS(on) compared with the previous generation.

The concept is simple: if the package can conduct heat efficiently and tolerate repeated thermal expansion better, the module can support demanding load cycles with less derating.

In addition, power-cycling performance exceeded 90,000 cycles under harsh stress conditions, with no end-of-life indicators observed in the interconnection layer.

Infineon SiC module portfolio: EasyPACK™ B, C, S, and XHP™

We offer CoolSiC™ power modules across established and newer package platforms, allowing designers to select the appropriate power level, footprint, topology, and integration approach. 

EasyPACK™ B

The established EasyPACK™ B series includes baseplate-less modules in different package sizes 1B to 4B and circuit topologies for scalable inverter and converter designs. PressFIT pin-rivet connections support PCB-based assembly, while the flexible package platform with different package sizes addresses applications such as solar inverters, energy storage systems, onboard chargers, DC-DC converters, and auxiliary drives.

EasyPACK™ C

CoolSiC™ modules in EasyPACK™ C series address and support applications including fast DC EV charging, megawatt charging, energy storage, solid-state transformer (SST), solid-state circuit breaker (SSCB), and AI data centers. The package uses high-current PressFIT pins with twice the current capacity of standard and supports continuous operation up to 175°C and overload switching up to 200°C.

EasyPACK™ S

EasyPACK™ S is designed for compact, high-power-density systems, with a 5.6 mm module height and an approximately 33 × 36 mm² footprint. The first modules integrate 800 V and 1200 V CoolSiC™ MOSFETs based on second generation M2 technology, standard interconnection, a DBC substrate and PressFIT pins.

XHP™

XHP™ 2 platform brings CoolSiC™ technology to applications such as traction, renewable-energy generation, and industrial power conversion. The 3.3 kV CoolSiC™ XHP™ 2 module family was nominated for the 2024 Deutscher Zukunftspreis. 

System-level portfolio for SiC designs

Infineon complements its CoolSiC™ modules with EiceDRIVER™ gate driver ICs and XMC™, PSOC™ Control, and AURIX™ microcontrollers. XENSIV™ sensors and power-management solutions further support gate control, sensing, protection, and digital control in complete power-conversion systems. 

How Infineon validates CoolSiC™ module reliability

For customers, SiC module selection is also a supply decision.

Infineon’s SiC manufacturing experience extends from commercial products based on 2-inch wafer technology in 2001 to today’s high-volume production using wafer diameter of 150 mm (6") and 200 mm (8") substrates.

Infineon’s first phase of the Kulim, Malaysia SiC power fab opened in August 2024, marking a major step toward establishing one of the industry's largest and most competitive 200 mm SiC power semiconductor manufacturing facilities.

For wide-bandgap technologies, the Villach, Austria, and Kulim, Malaysia sites operate as a "One Virtual Fab," leveraging shared technologies and processes to support efficient production ramp-up and operational consistency.

Our Smart Power Fab in Dresden, Germany, complements this manufacturing footprint by expanding 300 mm production capacity for power semiconductors and analog/mixed-signal components.

We further strengthen SiC supply-chain resilience through multiple wafer supply agreements with Wolfspeed, TanKeBlue, SK Siltron CSS, and Resonac. These agreements cover 150 mm materials and support the industry’s transition to 200 mm (8-inch) wafer diameters. 

Why scalable SiC manufacturing matters for supply security

SiC devices are not simply “faster silicon.”

Infineon’s SiC reliability whitepaper explains that SiC-based devices require a different approach to reliability testing compared with Si. We consider many factors, like material properties, electric fields, switching speed, gate-oxide behavior, humidity robustness, body diode behavior, cosmic-ray robustness, and power-cycling effects when choosing the best process for design and reliability testing.

This matters for engineers because the application risk is not only whether a module switches efficiently on day one; it is whether the chip, gate oxide, package, and interconnect remain stable over the mission profile.

At Infineon, we draw on more than 25 years of SiC reliability expertise, combining mission-profile-based analysis, extended qualification, and rigorous validation testing to help customers build reliable, long-lasting systems.

Takeaway

Infineon SiC modules help engineers design more efficient, compact, reliable, and supply-resilient power systems by combining CoolSiC™ technology, robust packaging, broad module options, and scalable manufacturing.

Ready to make your next power design more efficient and supply-resilient?

Click here to compare Infineon SiC modules

Frequently asked questions about SiC MOSFET

1. What applications are Infineon SiC modules used for?

.XT is Infineon’s extended-lifetime interconnection approach, implemented differently by product type. In discrete devices, .XT uses diffusion soldering between the chip and lead frame. In power modules, .XT combines sintered die attach with copper front-side bond interconnection to improve thermal performance and power-cycling capability.

The 200 mm SiC roadmap supports higher manufacturing efficiency and supply security from capacity scaling; Infineon announced the first 200 mm SiC product rollout from Villach in Q1 2025 and a Kulim transition from 150 mm to 200 mm wafers.

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