S26KS128SDPBHM023
Active and preferred
RoHS Compliant
Lead-free

S26KS128SDPBHM023

Datasheet
package
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S26KS128SDPBHM023
S26KS128SDPBHM023
Datasheet


Product details

  • Classification
    ISO 26262-ready
  • Density
    128 MBit
  • Family
    KS-S
  • Initial Access Time
    96 ns
  • Interface Bandwidth
    333 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    - / 166
  • Interfaces
    HYPERBUS
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage range
    1.7 V to 1.95 V
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Automotive

Recommended
OPN
S26KS128SDPBHM023
Product Status active and preferred
Infineon Package
PG-BGA-24
Package Name FBGA-24 (002-15550)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-BGA-24
Package Name FBGA-24 (002-15550)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S26KS128SDPBHM023 is a 128 Mb (16 MB) HYPERFLASH™ memory with HYPERBUS™ interface, supporting 1.8 V and 3.0 V operation. It achieves up to 333 MBps DDR read throughput at 166 MHz, features uniform 256 KB sectors, ECC for 1-bit correction, and 20-year data retention. Qualified to AEC-Q100 Grade 1 for -40°C to +125°C, it offers low power modes and 100,000 program/erase cycles, ideal for high-speed automotive and industrial code and data storage.

Features

  • 3.0 V I/O with 11 bus signals
  • 1.8 V I/O with 12 bus signals
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 8-bit data bus (DQ[7:0])
  • 96-ns initial random read access time
  • 512-byte program buffer
  • ECC: 1-bit correction, 2-bit detection
  • Hardware accelerated CRC calculation
  • Secure silicon region (1024-byte OTP)
  • Advanced sector protection methods
  • Low power modes: standby 25 µA, deep

Benefits

  • High throughput enables fast data access
  • DDR boosts system performance
  • 8-bit bus simplifies integration
  • Fast random access reduces latency
  • Large buffer speeds up programming
  • ECC ensures reliable data integrity
  • CRC detects data errors quickly
  • Secure region protects critical data
  • Flexible sector protection enhances security
  • Low power modes extend battery life

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