Active and preferred
RoHS Compliant
Lead-free

S25FL064LABBHI020

Data Sheet
package
software
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S25FL064LABBHI020
S25FL064LABBHI020
ea.
Data Sheet

Product details

  • Density
    64 MBit
  • Family
    FL-L
  • Interface Bandwidth
    54 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    108 / 54
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2032
  • Qualification
    Industrial
Recommended
OPN
S25FL064LABBHI020
Product Status active and preferred
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15534)
Packing Size 1690
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15534)
Packing Size 1690
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S25FL064LABBHI020 is a 64 Mb SPI NOR flash memory using 65-nm floating gate technology, supporting up to 108 MHz SDR and 54 MHz DDR. It offers flexible read, program, and erase options including 256-byte page programming and uniform 4 KB sector, 32 KB half block, and 64 KB block erase. Operating from 2.7 V to 3.6 V, it meets automotive AEC-Q100 Grade 1 (-40°C to +125°C). Typical uses include code shadowing, XIP, and secure storage in automotive and embedded systems.

Features

  • SPI interface with single, dual, quad I/O
  • Supports DDR and QPI modes
  • 256-byte page programming buffer
  • Uniform 4 KB, 32 KB, 64 KB, and chip erase
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • Security regions with individual lock bits
  • Deep Power Down mode for data protection
  • 2.7 V to 3.6 V supply voltage
  • Input signal overshoot tolerance ±1.0 V

Benefits

  • Flexible I/O options enable fast data
  • DDR/QPI boost read and write speeds
  • Large buffer allows efficient programming
  • Multiple erase sizes fit varied applications
  • High endurance for long-term reliability
  • Data remains safe for up to 20 years
  • Security regions prevent unauthorized access
  • Deep Power Down blocks unwanted writes
  • Operates in standard 3 V systems
  • Handles transient voltage spikes safely

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }