IPP100N08S2L-07

IPP100N08S2L-07

75 V, N-Ch, 6.5 mΩ max, Automotive MOSFET, TO-220, OptiMOS™

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IPP100N08S2L-07
IPP100N08S2L-07


Product details

  • Budgetary Price €/1k
    1.69
  • Country of Assembly (Last BE site, current, subject to change)
    Malaysia
  • Country of Diffusion (Last FE site, current, subject to change)
    Austria
  • ID (@25°C) max
    100 A
  • IDpuls max
    400 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    TO220 (PG-TO220-3)
  • Polarity
    N
  • Ptot max
    300 W
  • QG (typ @10V) max
    246 nC
  • QG (typ @10V)
    182 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    6.5 mΩ
  • RthJC max
    0.5 K/W
  • Technology
    OptiMOS™
  • VDS max
    75 V
  • VGS(th) range
    1.2 V to 2 V
  • VGS(th)
    1.6 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant

Features

  • N-Ch-Logic Level-Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low RDS(on)
  • 100% Avalanche tested
  • PPAP Capable Device

Benefits

  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

Applications

Documents

Design resources

Developer community