FF800R12KE7D_S8
NEW
Active and preferred
RoHS Compliant
Lead-free

FF800R12KE7D_S8

NEW
1200 V, 800 A half-bridge IGBT module
ea.
in stock

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FF800R12KE7D_S8
FF800R12KE7D_S8
ea.


Product details

  • Configuration
    hald-bridge
  • Dimensions (length)
    106.4 mm
  • Dimensions (width)
    61.4 mm
  • Housing
    62 mm
  • IC(nom) / IF(nom)
    800 A
  • IC max
    800 A
  • Qualification
    Industrial
  • Technology
    IGBT7 - E7
  • VCE(sat)
    1.5 V
  • VCES / VRRM
    1200 V
  • VF (Tvj=25°C typ)
    1.8 V
  • Voltage Class max
    1200 V

OPN
FF800R12KE7DS8HPSA1
Product Status active and preferred
Infineon Package AG-62MMHB
Package Name N/A
Packing Size 10
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free No
RoHS Compliant Yes
Country of Assembly (CoA)
HU
Country of Diffusion (CoD)
DE,MY
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package AG-62MMHB
Package Name -
Packing Size 10
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
HU
Country of Diffusion (CoD)
DE,MY
ea.
in stock
62 mm 1200 V, 800 A half-bridge low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7, improved diode performance and 175°C continuous operation temperature.

Features

  • Tvj op = 175°C continuous
  • Highest power density
  • Screw power terminals
  • Isolated baseplate
  • 20% improved diode performance

Benefits

  • higher inverter output current
  • less parallelization of the modules>
  • reduction of total system cost
  • reduced cooling efforts
Documents

Design resources

Developer community